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INC2002AX SERIES
FEATURE
Small package for easy mounting. High reverse hFE Small collector to emitter saturation voltage. VCE(sat)=40mV(TYP.)@IC=50mA/IB=2.5mA Low on Resistance Ron=0.65(TYP.)@IB=5mA
0.5 1.6 1.0
FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
INC2002AU1
1.6 0.4 0.8 0.4
Unitmm

0.3
APPLICATION
muting circuit , switching circuit
JEITASC-75A JEDEC TERMINAL CONNECTOR BASE EMITTER COLLECTOR
0.7
0.55
W
0.65
INC2002AM1
2.1 0.425 1.25 0.425
00.1
0.15 0.3
MARKING
2.0 1.3
0.65
0.5
0.9
0.7
INC2002AC1
2.5 0.5 1.5 0.5
00.1
0.15
JEITASC-70 JEDEC TERMINAL CONNECTOR BASE EMITTER COLLECTOR
0.95

0.4
JEITASC-59 JEDECSimilar to TO-236 TERMINAL CONNECTOR BASE EMITTER COLLECTOR
2.9 1.90 1.1
0.95
0.8
ISAHAYA ELECTRONICS CORPORATION
00.1
0.16
.
INC2002AX SERIES
FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
MAXIMUM RATING
SYMBOL PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation(Ta=25) Junction temperature Storage temperature INC2002AU1 RATING INC2002AM1 50 50 20 600 200 +150 -55+150 LIMIT TYP INC2002AC1 UNIT V V V mA mW
150
ELECTRICAL CHARACTERISTICS
SYMBOL B EB CE E Cob RON PARAMETER C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Gain band width product Collector output capacitance Output "ON" resistance TEST CONDITION I C=50AIE=0mA I E=50AIC=0mA I C=1mARBE= VCB=50VI E =0mA VEB=50VI C =0mA VCE=5VI C =10mA I C =50mAI B =2.5mA VCE=10VI E =-10mAf=100MHz VCB=10VI E =0Af=1MHz IB=5mARL=1k MIN 50 50 20 MAX UNIT V V V A A mV MHz pF
820 40 40 4.0 0.65
0.5 0.5 2500 150
TYPICAL CHARACTERISTICS
IC - VCE COLLECTOR CURRENTIC (mA) 100 Ta=25 80
100uA
IC - VBE
50 COLLECTOR CURRENTIC (mA) 40 30 20 10 0
Ta=25 VCE=5V
60 40 20 0 0
90uA 80uA
70uA 60uA 50uA 40uA 30uA 20uA IB=10uA
1 2 3 4 COLLECTOR TO EMITTER VOLTAGEVCE (V)
5
0
0.2 0.4 0.6 0.8 BASE TO EMITTER VOLTAGEVBE (V)
1
ISAHAYA ELECTRONICS CORPORATION
.
INC2002AX SERIES
FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
hFE - IC 10000
DC REVERSE CURRENT GAINhFER DC FORWARD CURRENT GAINhFE
hFER- IE 10000
1000
1000 100
100 10 Ta=25 VCE=5V 1 0.1 1 10 100 COLLECTOR CURRENTIC (mA) VCE(sat) - IC 1000
10
Ta=25 VEC=5V 0.1 1 10 100 EMITTER CURRENTIE (mA) 1000
1
1000
COLLECTOR TO EMITTER SATURATION VOLTAGEVCEsatmV
fT - IE 100
TRANSITION FREQUENCYfT(MHz)
Ta=25 IC/IB=20 100
80 60 40 20 0
Ta=25 VCE=10V
10
1 0.1 1 10 100 COLLECTOR CURRENTICmA 1000
-1
-10 EMITTER CURRENTIE(mA)
-100
Cob - VCB 100
COLLECTOR OUTPUT CAPACITANCE Cob(pF)
Ron - IB
10
Ta=25
ON RESISTANCERon ()
10
1
1 Ta=25 IE=0mA f=1MHz 0.1 0.1 1 10 COLLECTOR TO BASE VOLTAGEVCB(V) 100
0.1 0.1 1 BASE CURRENTIB(mA) 10
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2009

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